Isothermal annealing of radiation defects in bulk material of diodes from 8" silicon wafers

TL;DR

This study investigates how radiation damage in silicon diode bulk material from 8-inch wafers can be mitigated through isothermal annealing, providing insights for detector performance in high-radiation environments like the HL-LHC.

Contribution

It presents a detailed analysis of radiation damage and annealing behavior in silicon diode materials from 8-inch wafers, including measurements across different thicknesses, materials, and neutron fluences.

Findings

Radiation damage effects vary with material and thickness.

Isothermal annealing influences diode capacitance and leakage current.

Damage mitigation strategies can improve detector longevity.

Abstract

The high luminosity upgrade of the LHC will provide unique physics opportunities, such as the observation of rare processes and precision measurements. However, the accompanying harsh radiation environment will also pose unprecedented challenged to the detector performance and hardware. In this paper, we study the radiation induced damage and its macroscopic isothermal annealing behaviour of the bulk material from new 8" silicon wafers using diode test structures. The sensor properties are determined through measurements of the diode capacitance and leakage current for three thicknesses, two material types, and neutron fluences from $6.5\cdot 10^{14}$ to $10^{16}\,\mathrm{neq/cm^2}$.