Role of the annealing parameters on the resistance of indium tin oxide nanocrystalline films

TL;DR

This study systematically investigates how annealing temperature and duration affect the electrical resistance of indium tin oxide nanocrystalline films, demonstrating a tunable resistance range over three orders of magnitude for potential optoelectronic applications.

Contribution

It provides new insights into controlling the electrical resistance of ITO nanocrystalline films through post-fabrication annealing parameters.

Findings

Resistance varies over three orders of magnitude with annealing conditions.

Optimal annealing parameters can tailor electrical properties for specific applications.

The study offers a systematic approach to tuning ITO film resistance.

Abstract

The optical and electrical properties of films made of nanoparticles of indium tin oxide (ITO) are widely studied because of the significance of this material for transparent electrodes, smart windows, and nonlinear optics components. In this work, a systematic study of the resistance in ITO nanocrystalline films, as a function of post-fabrication parameters, such as the temperature and time of annealing, has been performed. A tunability of the resistance with the annealing parameters, in a range of three orders of magnitude, has been demonstrated.