Widely tunable 2 $\mu$m hybrid laser using GaSb semiconductor optical amplifiers and Si3N4 photonics integrated reflector

TL;DR

This paper demonstrates a widely tunable 2 μm hybrid laser combining GaSb semiconductor optical amplifiers with Si3N4 photonics, achieving broad tuning, high output power, and low-loss integrated components for sensing applications.

Contribution

It introduces a novel hybrid laser platform with a tunable Si3N4 Vernier mirror integrated with GaSb gain chips, enabling broad wavelength tuning and low-loss photonic components.

Findings

Maximum output power of 15 mW at room temperature

Tuning range of 80 nm (1937-2017 nm)

Low-loss Si3N4 waveguides with 0.15 dB/cm transmission loss

Abstract

Tunable lasers emitting at a 2-3 $\mu$m wavelength range and compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with Si$_3$N$_4$ photonic integrated circuits offers an attractive platform. Herein, we exploit the low-loss features of Si$_3$N$_4$ waveguides and demonstrate a hybrid laser comprising a GaSb gain chip with an integrated tunable Si$_3$N$_4$ Vernier mirror. At room temperature, the laser exhibited a maximum output power of 15 mW and a tuning range of 80 nm (1937-2017 nm). The low-loss performance of several fundamental Si$_3$N$_4$ building blocks for photonic integrated circuits is also validated. More specifically, the single-mode waveguide exhibit transmission loss as low as 0.15 dB/cm, the 90$^\circ$ bend has 0.008 dB loss, and the 50/50 Y-branch has an insertion loss of 0.075 dB.