Observation of oscillating $g$-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts
Karina Hudson, Ashwin Srinivasan, Dmitry Miserev, Qingwen Wang, Oleh, Klochan, Oleg Sushkov, Ian Farrer, David Ritchie, Alex Hamilton

TL;DR
This study reveals strong oscillations in the in-plane hole g-factor anisotropy in GaAs quantum point contacts caused by crystal lattice anisotropy, highlighting the complex interplay of spin-orbit interactions and quantum confinement.
Contribution
We experimentally observe and theoretically model the oscillating in-plane hole g-factor anisotropy driven by crystal lattice asymmetry in GaAs quantum point contacts, separating Rashba and cubic crystal effects.
Findings
g-factor varies by a factor of 5 with 45° rotation
Crystal anisotropy dominates over symmetric models
Theoretical models match experimental data well
Abstract
Many modern spin-based devices rely on the spin-orbit interaction, which is highly sensitive to the host semiconductor heterostructure and varies substantially depending on crystal direction, crystal asymmetry (Dresselhaus), and quantum confinement asymmetry (Rashba). One-dimensional quantum point contacts are a powerful tool to probe both energy and directional dependence of spin-orbit interaction through the effect on the hole -factor. In this work we investigate the role of cubic crystal asymmetry in driving an oscillation in the in-plane hole -factor anisotropy when the quantum point contact is rotated with respect to the crystal axes, and we are able to separate contributions to the Zeeman Hamiltonian arising from Rashba and cubic crystal asymmetry spin-orbit interactions. The in-plane -factor is found to be extremely sensitive to the orientation of the quantum point…
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor Quantum Structures and Devices · Physics of Superconductivity and Magnetism
