General Theory for Bilayer Stacking Ferroelectricity
Junyi Ji, Changsong Xu, and H. J. Xiang

TL;DR
This paper develops a comprehensive group theory-based framework for understanding bilayer stacking ferroelectricity in 2D materials, explaining previous phenomena and enabling new ferroelectric designs through stacking configurations.
Contribution
It introduces a general theoretical model for bilayer stacking ferroelectricity, encompassing all layer groups and revealing rules for symmetry changes and polarization behavior.
Findings
All possible bilayer stacking ferroelectricities identified
Stacking can induce ferroelectricity in centrosymmetric monolayers
Out-of-plane polarization in CrI3 can be manipulated via in-plane electric fields
Abstract
Two-dimensional (2D) ferroelectrics, which is rare in nature, enable high-density non-volatile memory with low energy consumption. Here, we propose a theory of bilayer stacking ferroelectricity (BSF), in which, two stacked layers of the same 2D material, with different rotation and translation, exhibits ferroelectricity. By performing systematic group theory analysis, we find out all the possible BSF in all the 80 layer groups (LGs) and discover the rules about the creation and annihilation of symmetries in the bilayer. Our general theory can not only explain all the previous findings (including sliding ferroelectricity), but also provide new perspective. Interestingly, the direction of the electric polarization of the bilayer could be totally different from that of the single layer. In particular, the bilayer could become ferroelectric after properly stacking two centrosymmetric…
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Taxonomy
TopicsMultiferroics and related materials · 2D Materials and Applications · Ferroelectric and Piezoelectric Materials
