Magnetotransport Properties and Fermi Surface Topology of Nodal line Semimetal InBi

TL;DR

This study investigates the magnetotransport properties and Fermi surface topology of the nodal line semimetal InBi, revealing high magnetoresistance, resistivity behavior, and detailed electronic structure through experimental and theoretical methods.

Contribution

It provides a comprehensive analysis of InBi's Fermi surface and magnetotransport properties, including a mathematical model for resistivity behavior and insights into doping effects.

Findings

High magnetoresistance explained by carrier compensation

Complete 3D Fermi surface topology determined

Resistivity up-turn behavior modeled mathematically

Abstract

In the present study, we have discussed the up-turn behavior in the resistivity pattern of the topological nodal line semimetal InBi. We argued that such nature could be generalized with a mathematical model, that can be applied to any compounds exhibiting similar behavior. The extremely high magnetoresistance (XMR) has also been explained by the carrier compensation in the compound, estimated from the Hall conductivity. Moreover, from the study of Subhnikov-de Haas (SdH) oscillation and density functional theory (DFT), we obtained the complete three-dimensional (3D) Fermi surface topology of the compound InBi. A detailed understanding of carriers' behavior has been discussed using those studies. We have also unfurled the topology of each electron and hole pocket and its possible modulation with electron and hole doping.