Electronic State of T'-Pr$_{1.3-x}$La$_{0.7}$Ce$_x$CuO$_4$ ($x = 0.10$) Studied by Compton Scattering
Takayuki Kawamata, Shin Saito, Naruki Tsuji, Takuya Sumura, Tadashi, Adachi, Masatsune Kato, Yoshiharu Sakurai, Yoji Koike

TL;DR
This study uses Compton scattering to examine how reduction annealing affects the electronic states in electron-doped T'-cuprate Pr1.3-xLa0.7CexCuO4, revealing increased electron populations and evidence of local hole doping.
Contribution
First spectroscopic evidence showing reduction annealing increases electron populations in specific orbitals and induces local hole doping in T'-cuprate superconductors.
Findings
Electrons in O2p, Cu3dx2-y2, and Cu3d3z2-r2 orbitals increase after reduction.
Reduction annealing suggests hole doping in Cu3d3z2-r2 orbital.
Spectroscopic evidence supports previous transport measurement hypotheses.
Abstract
We have performed Compton scattering measurements on as-grown and reduced single crystals of the electron-doped T'-cuprate Pr1.3-xLa0.7CexCuO4 (x = 0.10) to investigate the effect of reduction annealing on the electronic state. The obtained results have revealed that the numbers of electrons in the O2p orbital in the Zhang-Rice singlet band, the Cu3dx2-y2 orbital, and the Cu3d3z2-r2 orbital are increased by reduction annealing. The increase in the number of Cu3d3z2-r2 electrons suggests the existence of Cu3d3z2-r2 holes in the as-grown single crystal. This is spectroscopic evidence of local hole doping into the Cu3d3z2-r2 orbital around the excess oxygen, as suggested by transport measurements [T. Adachi et al., J. Phys. Soc. Jpn. 82, 063713 (2013)].
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