Enhanced Thermoelectric Performance of Nanostructured Nickel Doped Ag2Te
Vikash Sharma, Divya Sharma, Ranu Bhatt, Pankaj Patro, Gunadhor Singh, Okram

TL;DR
This study demonstrates that nickel doping and nanostructuring significantly enhance the thermoelectric performance of Ag2Te, achieving a maximum ZT of 0.86 near 480 K, surpassing previous reports.
Contribution
It introduces a combined approach of doping and nanostructuring to optimize thermoelectric properties of Ag2Te, achieving record-high ZT values.
Findings
Maximum ZT of 0.86 near 480 K in Ni-doped Ag2Te nanostructures
83% improvement over bulk Ag2Te thermoelectric performance
Structural phase transition influences thermal conductivity and thermoelectric efficiency
Abstract
We report on the thermoelectric properties of nickel doped Ag2-xNixTe (x = 0, 0.015, 0.025 & 0.055, 0.115, 0.155) nanostructures in the temperature (T) range of 5 K to 575 K. The electrical resistivity of Ag2Te nanostructure shows metallic behaviour in 5 K to 300 K initially that evolves into two metal to insulator transitions (MITs) at low and mid-temperature regimes with increasing x due to Mott-variable range hopping (VRH) and Arrhenius transports, respectively. Their Seebeck coefficient varies nearly in a linear fashion in this temperature range, showing metallic or doped-degenerate semiconducting behaviour. Notably, this behaviour of the Seebeck coefficient is in contrast to Mott VRH conduction as observed in resistivity. The steady increase in resistivity and S with the sharp decrease in thermal conductivity between 410 K to 425 K associated with the structural phase transition…
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Taxonomy
TopicsAdvanced Thermoelectric Materials and Devices · Advanced Thermodynamics and Statistical Mechanics · Chalcogenide Semiconductor Thin Films
