Recent advances in hole-spin qubits

TL;DR

This paper reviews recent progress in hole-spin qubits, highlighting their advantages, theoretical framework, experimental realizations, and future outlook in semiconductor quantum dot systems.

Contribution

It provides a comprehensive overview of the advantages, theoretical understanding, and experimental developments of hole-spin qubits in various semiconductor materials.

Findings

Hole-spin qubits have potential advantages over electron-spin qubits.

Experimental realizations include GaAs, Si, and Si/Ge heterostructures.

Theoretical insights into spin-orbit coupling and hyperfine interactions are discussed.

Abstract

In recent years, hole-spin qubits based on semiconductor quantum dots have advanced at a rapid pace. We first review the main potential advantages of these hole-spin qubits with respect to their electron-spin counterparts, and give a general theoretical framework describing them. The basic features of spin-orbit coupling and hyperfine interaction in the valence band are discussed, together with consequences on coherence and spin manipulation. In the second part of the article we provide a survey of experimental realizations, which spans a relatively broad spectrum of devices based on GaAs, Si, or Si/Ge heterostructures. We conclude with a brief outlook.