Effective Land\'e factors of electrons and holes in lead chalcogenide nanocrystals

TL;DR

This paper provides a comprehensive theoretical analysis of electron and hole Landé g-factors in lead chalcogenide nanocrystals, combining symmetry analysis, atomistic calculations, and extended k.p theory to relate quantum confinement effects to bulk material properties.

Contribution

It introduces a unified approach to accurately calculate and understand g-factors in nanocrystals using advanced theoretical methods.

Findings

Renormalization of g-factors due to quantum confinement is accurately described.

Analytical expressions from extended k.p theory match atomistic calculations.

The study enhances understanding of spin-related phenomena in lead chalcogenide nanocrystals.

Abstract

The Land\'e or g-factors of charge carriers in solid state systems provide invaluable information about response of quantum states to external magnetic fields and are key ingredients in description of spin-dependent phenomena in nanostructures. We report on the comprehensive theoretical analysis of electron and hole g-factors in lead chalcogenide nanocrystals. By combining symmetry analysis, atomistic calculations, and extended k.p theory, we relate calculated linear-in-magnetic field energy splittings of confined electron states in nanocrystals to the intravalley g-factors of the multi-valley bulk materials, renormalized due to the quantum confinement. We demonstrate that this renormalization is correctly reproduced by analytical expressions derived in the framework of the extended k.p model.