Silicon $4\pi$ spectrometer for $\beta$-decay electrons with energies up to 3~MeV

TL;DR

This paper introduces a novel silicon $4 extpi$ spectrometer designed for precise measurement of $eta$-decay electrons up to 3 MeV, featuring a $4 extpi$ geometry and coincidence detection capabilities.

Contribution

The paper presents a new full-absorption $eta$-spectrometer with $4 extpi$ geometry using Si(Li) detectors, enabling direct $eta$-spectra measurement without backscattering corrections.

Findings

Effective detection of $eta$-spectra up to 3 MeV.

Disregards electron backscattering corrections.

Enhanced detection of $eta$-spectra with coincidence $ extgamma$-detection.

Abstract

We present a description of the originally developed $\beta$-spectrometer consisting of two Si(Li)-detectors with sensitive area thickness above 8~mm and $4\pi$-geometry. The full absorption spectrometer allows for direct measurements of $\beta$-spectra, disregarding the corrections to the response function induced by the electron backscattering from the crystal surface. In case of $\beta$-spectra of transitions to the excited state of the daughter isotope additional 3" BGO-detector is used in order to detect the $\gamma$-quanta in coincidence with the pair of Si(Li)-spectrometers.