A new quasi-one-dimensional transition metal chalcogenide semiconductor (Nb$_4$Se$_{15}$I$_2$)I$_2$
Kejian Qu, Zachary W. Riedel, Iri\'an S\'anchez-Ram\'irez, Simon, Bettler, Junseok Oh, Emily N. Waite, Nadya Mason, Peter Abbamonte, Fernando, de Juan Sanz, Maia G. Vergniory, Daniel P. Shoemaker

TL;DR
This paper reports the synthesis, structural characterization, and electronic properties of a new quasi-one-dimensional transition metal chalcogenide semiconductor, Nb4Se15I2, expanding the family of low-dimensional materials.
Contribution
The study introduces a novel quasi-one-dimensional Nb4Se15I2 compound with detailed structural analysis and electronic characterization, including DFT calculations and resistivity measurements.
Findings
Nb4Se15I2 is a semiconductor with a ~0.6 eV direct band gap.
The material shows no structural phase transition down to 8.2 K.
Resistivity measurements indicate an activation energy of around 0.1 eV.
Abstract
The discovery of new low-dimensional transition metal chalcogenides is contributing to the already prosperous family of these materials. In this study, needle-shaped single crystals of a new quasi-one-dimensional material (NbSeI)I were grown by chemical vapor transport, and the structure was solved by single crystal X-ray diffraction (XRD). The new structure has one-dimensional (NbSeI) chains along the [101] direction, with two I ions per formula unit directly bonded to Nb. The other two I ions are loosely coordinated and intercalate between the chains. Individual chains are chiral, and stack along the axis in opposing directions, giving space group . The phase purity and crystal structure was verified by powder XRD. Density functional theory calculations show (NbSeI)I to be a semiconductor with a direct…
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Taxonomy
TopicsCrystal Structures and Properties · Iron-based superconductors research · Inorganic Chemistry and Materials
