Theory of resonant Raman scattering due to spin-flips of resident charge carries and excitons in perovskite semiconductors

TL;DR

This paper develops a theoretical framework for resonant Raman scattering involving spin flips of resident charges and excitons in perovskite semiconductors, introducing novel mechanisms and analyzing polarization and magnetic field effects.

Contribution

It introduces a comprehensive theory for spin-flip Raman scattering in perovskites, including new mechanisms involving polaritons and invariant equations for polarization and magnetic field dependence.

Findings

Identification of spin-flip Raman scattering mechanisms involving excitons, biexcitons, and polaritons.

Derivation of invariant equations for scattering efficiency based on polarization and magnetic field orientation.

Proposal of polariton-mediated spin-flip Raman scattering as a novel mechanism.

Abstract

We have developed a theory of Raman scattering with single and double spin flips of localized resident electrons and holes as well as nonequilibrium localized excitons in semiconductor perovskite crystals under optical excitation in the resonant exciton region. Scattering mechanisms involving localized excitons, biexcitons and exciton polaritons as intermediate states has been examined, the spin-flip Raman scattering by polaritons being a novel mechanism. The derived equations are presented in the invariant form allowing one for the analysis of the dependence of scattering efficiency on the polarization of the initial and scattered light and on the orientation of the external magnetic field.