Theory of multi-dimensional quantum capacitance and its application to spin and charge discrimination in quantum-dot arrays

TL;DR

This paper introduces a multi-dimensional quantum capacitance framework using a matrix formalism, enabling improved discrimination of quantum states in quantum-dot arrays by optimizing gate voltage configurations.

Contribution

It generalizes quantum capacitance to multiple voltages via a matrix approach, allowing for better state discrimination in quantum-dot systems.

Findings

Quantum capacitance matrix depends on voltage oscillation directions.

Identified charge stability boundaries in multi-dimensional voltage space.

Optimized discrimination between different particle and spin states.

Abstract

Quantum states of a few-particle system capacitively coupled to a metal gate can be discriminated by measuring the quantum capacitance, which can be identified with the second derivative of the system energy with respect to the gate voltage. This approach is here generalized to the multi-voltage case, through the introduction of the quantum capacitance matrix. The matrix formalism allows us to determine the dependence of the quantum capacitance on the direction of the voltage oscillations in the parameter space, and to identify the optimal combination of gate voltages. As a representative example, this approach is applied to the case of a quantum-dot array, described in terms of a Hubbard model. Here, we first identify the potentially relevant regions in the multi-dimensional voltage space with the boundaries between charge stability regions, determined within a semiclassical approach. Then, we quantitatively characterize such boundaries by means of the quantum capacitance matrix. Altogether, this provides a procedure for optimizing the discrimination between states with different particle numbers and/or total spins.