Anti-site disorder and Berry curvature driven anomalous Hall effect in spin gapless semiconducting Mn2CoAl Heusler compound
Nisha Shahi, Ajit K. Jena, Gaurav K. Shukla, Vishal Kumar, Shivani, Rastogi, K. K. Dubey, Indu Rajput, Sonali Baral, Archana Lakhani, Seung-Cheol, Lee, Satadeep Bhattacharjee, and Sanjay Singh

TL;DR
This study investigates the crystal structure and anomalous Hall effect in Mn2CoAl, revealing that anti-site disorder enhances Berry curvature and intrinsic anomalous Hall conductivity, with implications for spintronic applications.
Contribution
It provides a combined experimental and theoretical analysis showing how anti-site disorder influences Berry curvature and enhances the anomalous Hall effect in Mn2CoAl.
Findings
Anti-site disorder between Mn and Al atoms observed.
Intrinsic anomalous Hall conductivity measured at 35 S/cm.
Disorder enhances Berry curvature and AHC, aligning theory with experiment.
Abstract
Spin gapless semiconductors exhibit a finite band gap for one spin channel and closed gap for other spin channel, emerged as a new state of magnetic materials with a great potential for spintronic applications. The first experimental evidence for the spin gapless semiconducting behavior was observed in an inverse Heusler compound Mn2CoAl. Here, we report a detailed investigation of the crystal structure and anomalous Hall effect in the Mn2CoAl using experimental and theoretical studies. The analysis of the high-resolution synchrotron x-ray diffraction data shows anti-site disorder between Mn and Al atoms within the inverse Heusler structure. The temperature-dependent resistivity shows semiconducting behavior and follows Mooijs criteria for disordered metal. Scaling behavior of the anomalous Hall resistivity suggests that the anomalous Hall effect in the Mn2CoAl is primarily governed by…
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Taxonomy
TopicsHeusler alloys: electronic and magnetic properties · Hydrogen Storage and Materials
