Light-induced switch based on edge modes in irradiated thin topological insulators

TL;DR

This paper proposes a light-controlled electronic switch in thin topological insulator nano-ribbons, utilizing edge modes influenced by circularly polarized light, with potential applications in nanoscale electronic devices.

Contribution

It introduces a novel light-induced switching mechanism based on edge modes in irradiated topological insulators, combining polarization control and magnetic doping for device design.

Findings

Edge modes enable coherent, quantized transport in nano-ribbons.

Light polarization determines edge mode localization and current flow.

Proposed nano-junctions function as effective electronic switches.

Abstract

We investigate transport properties through nano-ribbons of thin topological insulators irradiated by high frequency light with circular polarization. By using high frequency regime, a coherent and quantized transport through the nano-ribbon is guaranteed and then Lanadauer formalism is applicable. It is demonstrated that the pseudo-spin edge modes inside the band gap can host transmission through this nano-junction which their localization on the top and bottom edges depend strongly on the light polarization. These edge modes persist even if we apply a source-drain bias. Based on this edge selectivity for the current, one can design a light-induced switch with an appropriate on/off ratio of the current which is composed of two scattering regions with opposite light polarization. The local current on each bond shows how the current is passing through the edges and jumps into the opposite edge. Furthermore, some other nano-junctions are proposed as electronic switches which are designed based on the mass term engineering of the scattering region by means of perpendicular magnetization induced by magnetic doping and also structure inversion asymmetry applied on the scattering region.