Compact Model of a Topological Transistor

TL;DR

This paper presents a compact Verilog-A model for a topological transistor based on a quantum-spin Hall insulator, accurately capturing its operation modes and dependencies on key parameters with high precision.

Contribution

The authors develop a circuit-compatible, high-accuracy Verilog-A model for a topological transistor involving QSHI, FI, and SC components, enabling practical device simulation.

Findings

Model achieves over 99% accuracy in simulating device behavior.

Captures dependence on ferromagnetic precision, drain voltage, and temperature.

Enables integration of topological devices into circuit design.

Abstract

The precession of a ferromagnet leads to the injection of spin current and heat into an adjacent non-magnetic material. Besides, spin-orbit entanglement causes an additional charge current injection. Such a device has been recently proposed where a quantum-spin hall insulator (QSHI) in proximity to a ferromagnetic insulator (FI) and superconductor (SC) leads to the pumping of charge, spin, and heat. Here we build a circuit-compatible Verilog-A-based compact model for the QSHI-FI-SC device capable of generating two topologically robust modes enabling the device operation. Our model also captures the dependence on the ferromagnetic precision, drain voltage, and temperature with an excellent (> 99%) accuracy.