Physics inspired compact modelling of BiFeO$_3$ based memristors for hardware security applications

TL;DR

This paper develops a physics-inspired compact model for BiFeO3 memristors, capturing their stochastic switching behavior and environmental responses, to facilitate their application in hardware security such as PUFs.

Contribution

It introduces a novel 1D compact model for BFO memristors based on physical principles, enabling accurate circuit simulations for security applications.

Findings

Successfully reproduces experimental I-V characteristics.

Models stochastic vacancy migration and environmental effects.

Provides insights into memristor behavior for security device design.

Abstract

With the advent of the Internet of Things, nanoelectronic devices or memristors have been the subject of significant interest for use as new hardware security primitives. Among the several available memristors, BiFe$\rm O_{3}$ (BFO)-based electroforming-free memristors have attracted considerable attention due to their excellent properties, such as long retention time, self-rectification, intrinsic stochasticity, and fast switching. They have been actively investigated for use in physical unclonable function (PUF) key storage modules, artificial synapses in neural networks, nonvolatile resistive switches, and reconfigurable logic applications. In this work, we present a physics-inspired 1D compact model of a BFO memristor to understand its implementation for such applications (mainly PUFs) and perform circuit simulations. The resistive switching based on electric field-driven vacancy migration and intrinsic stochastic behaviour of the BFO memristor are modelled using the cloud-in-a-cell scheme. The experimental current-voltage characteristics of the BFO memristor are successfully reproduced. The response of the BFO memristor to changes in electrical properties, environmental properties (such as temperature) and stress are analyzed and consistent with experimental results.