Even-Denominator Fractional Quantum Hall State at Filling Factor {\nu} = 3/4
Chengyu Wang, A. Gupta, S. K Singh, Y. J. Chung, L. N. Pfeiffer, K. W., West, K. W. Baldwin, R. Winkler, M. Shayegan

TL;DR
This paper reports the discovery of a new even-denominator fractional quantum Hall state at filling factor 3/4 in a high-quality 2D hole system, suggesting potential non-Abelian properties in the lowest Landau level.
Contribution
It presents the first observation of an even-denominator FQHS at 3/4 in a 2D hole system within the lowest Landau level, expanding understanding of fractional quantum Hall states.
Findings
Strong resistance minimum at ν=3/4
Hall plateau observed at (h/e2)/(3/4)
Likely a non-Abelian state from composite fermion interactions
Abstract
Fractional quantum Hall states (FQHSs) exemplify exotic phases of low-disorder two-dimensional (2D) electron systems when electron-electron interaction dominates over the thermal and kinetic energies. Particularly intriguing among the FQHSs are those observed at even-denominator Landau level filling factors, as their quasi-particles are generally believed to obey non-Abelian statistics and be of potential use in topological quantum computing. Such states, however, are very rare and fragile, and are typically observed in the excited Landau level of 2D electron systems with the lowest amount of disorder. Here we report the observation of a new and unexpected even-denominator FQHS at filling factor {\nu} = 3/4 in a GaAs 2D hole system with an exceptionally high quality (mobility). Our magneto-transport measurements reveal a strong minimum in the longitudinal resistance at {\nu} = 3/4,…
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