Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse
Nicolas Paupy, Zakaria Oulad Elhmaidi, Alexandre Chapotot,, Tade\'a\v{s} Hanu\v{s}, Javier Arias-Zapata, Bouraoui Ilahi, Alexandre, Heintz, Alex Brice Poungou\'e Mbeunmi, Roxana Arvinte, Mohammad Reza, Aziziyan, Valentin Daniel, Gwena\"elle Hamon, J\'er\'emie Chr\'etien, Firas

TL;DR
This paper introduces the PEELER process for creating wafer-scale, detachable monocrystalline germanium nanomembranes that enable substrate reuse and facilitate the growth of III-V materials, reducing Ge consumption and costs.
Contribution
The novel PEELER process allows for wafer-scale Ge nanomembranes with high crystallinity and surface quality, enabling substrate reuse and integration with III-V materials.
Findings
Successful fabrication of wafer-scale Ge nanomembranes with <1 nm roughness.
Demonstrated high-quality GaAs layer growth on Ge NMs.
Reusability of Ge substrates through chemical reconditioning.
Abstract
Germanium (Ge) is increasingly used as a substrate for high-performance optoelectronic, photovoltaic, and electronic devices. These devices are usually grown on thick and rigid Ge substrates manufactured by classical wafering techniques. Nanomembranes (NMs) provide an alternative to this approach while offering wafer-scale lateral dimensions, weight reduction, limitation of waste, and cost effectiveness. Herein, we introduce the Porous germanium Efficient Epitaxial LayEr Release (PEELER) process, which consists of the fabrication of wafer-scale detachable monocrystalline Ge NMs on porous Ge (PGe) and substrate reuse. We demonstrate monocrystalline Ge NMs with surface roughness below 1 nm on top of nanoengineered void layer enabling layer detachment. Furthermore, these Ge NMs exhibit compatibility with the growth of III-V materials. High-resolution transmission electron microscopy…
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Taxonomy
TopicsNanowire Synthesis and Applications · Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence
