High Q-Factor Silicon Nitride Nanomechanical Resonators Fabricated by Maskless Femtosecond Laser Micro-machining

TL;DR

This paper demonstrates a flexible, maskless femtosecond laser ablation technique to rapidly fabricate high-Q silicon nitride nanomechanical resonators, avoiding traditional photolithography and electron-beam lithography limitations.

Contribution

It introduces a novel, maskless fabrication method for SiN nanomechanical resonators using femtosecond laser ablation, enabling rapid prototyping with high Q-factors.

Findings

Resonance frequencies and Q-factors measured for various beam widths.

High Q-factors (>10^5) achieved after laser fabrication.

Laser etching has negligible impact on tensile stress and Q-factors.

Abstract

Freestanding Silicon nitride (SiN) devices are central to the field of nanomechanical resonators and for other technology applications such as transmission electron imaging and nanopore bioassays. The nanofabrication techniques used for fabricating these devices often lack flexibility. While photolithography requires printing of an expensive photomask for each new design iteration, electron-beam lithography is extremely slow and commands high equipment cost. Here we demonstrate maskless rapid prototyping of freestanding SiN nanomechanical resonators fabricated by femtosecond laser ablation of plain SiN membrane in ambient air. We fabricate microbeams with different widths from 7 to 100 um, and we characterize their resonance frequency and mechanical quality (Q) factors. We find that membrane cracking can be avoided during fabrication by carefully engineering the etch pattern, and that laser etching has a negligible effect on built-in tensile stress. For each beam, Q-factors are measured for several eigenmodes and are found to remain high after laser etching. All beams show quality factors greater than 105, while unetched plain membranes have Q > 106. Possible causes for Q-factor reduction are identified, along with future process improvement directions.