HiRA: Hidden Row Activation for Reducing Refresh Latency of Off-the-Shelf DRAM Chips
Abdullah Giray Ya\u{g}l{\i}k\c{c}{\i}, Ataberk Olgun, Minesh Patel,, Haocong Luo, Hasan Hassan, Lois Orosa, O\u{g}uz Ergin, and Onur Mutlu

TL;DR
This paper introduces HiRA, a method to parallelize DRAM refresh operations with memory access without modifying existing chips, significantly reducing refresh latency and improving system performance.
Contribution
HiRA enables concurrent refresh and access in off-the-shelf DRAM chips by exploiting different charge restoration circuitry, reducing latency without hardware modifications.
Findings
HiRA reduces refresh latency by 51.4%.
System performance improves by 12.6%.
Effective for 56% of real off-the-shelf DRAM chips.
Abstract
DRAM is the building block of modern main memory systems. DRAM cells must be periodically refreshed to prevent data loss. Refresh operations degrade system performance by interfering with memory accesses. As DRAM chip density increases with technology node scaling, refresh operations also increase because: 1) the number of DRAM rows in a chip increases; and 2) DRAM cells need additional refresh operations to mitigate bit failures caused by RowHammer, a failure mechanism that becomes worse with technology node scaling. Thus, it is critical to enable refresh operations at low performance overhead. To this end, we propose a new operation, Hidden Row Activation (HiRA), and the HiRA Memory Controller (HiRA-MC). HiRA hides a refresh operation's latency by refreshing a row concurrently with accessing or refreshing another row within the same bank. Unlike prior works, HiRA achieves this…
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Taxonomy
TopicsSemiconductor materials and devices · Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices
