Revisiting Thermal Charge Carrier Refractive Noise in Semiconductor Optics for Gravitational-Wave Interferometers
Harrison Siegel, Yuri Levin

TL;DR
This paper reevaluates the thermal charge carrier refractive noise in semiconductor test masses for gravitational-wave detectors, incorporating standing wave effects and using the Fluctuation-Dissipation theorem, finding the noise is lower than previously estimated but still non-limiting.
Contribution
It introduces a refined calculation of TCCR noise using FDT and standing wave effects, updating previous estimates for next-generation interferometers.
Findings
TCCR noise amplitude is up to √2 times greater at 10 K than previous estimates.
At 77-300 K, TCCR noise is 5-7 orders of magnitude lower than earlier claims.
Standing wave effects reduce the estimated TCCR noise amplitude.
Abstract
The test masses in next-generation gravitational-wave interferometers may have a semiconductor substrate, most likely silicon. The stochastic motion of charge carriers within the semiconductor will cause random fluctuations in the material's index of refraction, introducing a noise source called Thermal Charge Carrier Refractive (TCCR) noise. TCCR noise was previously studied in 2020 by Bruns et al., using a Langevin force approach. Here we compute the power spectral density of TCCR noise by both using the Fluctuation-Dissipation theorem (FDT) and accounting for previously neglected effects of the standing wave of laser light which is produced inside the input test mass by its high-reflecting coatings. We quantify our results with parameters from Einstein Telescope, and show that at temperatures of 10 K the amplitude of TCCR noise is up to a factor of times greater than what…
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Taxonomy
TopicsPulsars and Gravitational Waves Research · Advanced Measurement and Metrology Techniques · Cold Atom Physics and Bose-Einstein Condensates
