Assessment of active dopants and p-n junction abruptness using in-situ biased 4D-STEM

TL;DR

This paper demonstrates that in-situ biased 4D-STEM can effectively measure and analyze the dopant distribution and electrical properties of silicon p-n junctions at nanometer resolution, revealing a graded dopant profile.

Contribution

It introduces the use of in-situ biased 4D-STEM for detailed characterization of p-n junctions, providing insights into dopant profiles and junction quality beyond traditional methods.

Findings

Measured electric field and built-in voltage were lower than expected for an abrupt junction.

Data suggests the presence of a graded dopant profile at the p-n interface.

Results are consistent with an intermediate region with a dopant gradient.

Abstract

A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron microscopy and off-axis electron holography have opened up the possibility of studying the electrostatic properties of a p-n junction with nm-scale spatial resolution. The complete description of a p-n junction must take into account the precise evolution of the concentration of dopants around the junction, since the sharpness of the dopant transition directly influences the built-in potential and the maximum electric field. Here, a contacted silicon p-n junction is studied through in-situ biased 4D-STEM. Measurements of electric field, built-in voltage, depletion region width and charge density in the space charge region are combined with analytical equations as well as finite-element simulations in order to evaluate the quality of the junction interface. The nominally-symmetric, highly doped ($N_A = N_D = 9\space x \space10^{18} cm^{-3}$) junction presents an electric field and built-in voltage much lower than expected for an abrupt junction. These experimental results are consistent with electron holography data. All measured junction parameters are compatible with the presence of an intermediate region with a graded profile of the dopants at the p-n interface. This hypothesis is also consistent with the evolution of the electric field with bias. These results demonstrate that in-situ biased 4D-STEM enables a better understanding of the electrical properties of semiconductor p-n junctions with nm-scale resolution.