Radiation Hardness of a Wide Spectral Range SiPM with Quasi-Spherical Junction

TL;DR

This paper evaluates a novel SiPM design with a quasi-spherical junction, demonstrating improved radiation hardness and high sensitivity across a broad spectral range, suitable for near-infrared applications.

Contribution

It introduces a new pixel geometry for SiPMs that maintains high efficiency and exhibits enhanced radiation hardness after neutron irradiation.

Findings

Dark count rate increase is significantly smaller than conventional SiPMs.

The new design achieves high photodetection efficiency over a wide spectral range.

The pixel geometry shows promising radiation hardness for high-radiation environments.

Abstract

New pixel geometries are on the rise to achieve high sensitivity in near-infrared wavelengths with silicon photomultipliers (SiPMs). We test prototypes of the tip avalanche photo-diodes, which feature a quasi-spherical p-n junction and a high photodetection efficiency over a wide spectral range, and analyze the performance after neutron irradiation. The observed increase in dark count rate is significantly smaller than for a SiPM with a conventional design, indicating a good radiation hardness of the pixel geometry.