Dynamic phases induced by two-level system defects on driven qubits

TL;DR

This paper investigates how two-level system defects influence the decoherence and dynamic phases of driven superconducting qubits, revealing four distinct convergence behaviors and potential for defect characterization through qubit evolution.

Contribution

It introduces a novel analysis of defect-induced decoherence in driven qubits using a Fokker-Planck approach, identifying four dynamic phases and linking qubit trajectories to defect properties.

Findings

Four distinct dynamic phases identified in qubit-defect interactions.

Qubit trajectories exhibit super-Poissonian distributions reducing to Gibbs states at zero driving.

Qubit evolution can indicate defect coupling strength via driving parameter variation.

Abstract

Recent experimental evidences point to two-level defects, located in the oxides and on the interfaces of the Josephson junctions, as the major constituents of decoherence in superconducting qubits. How these defects affect the qubit evolution with the presence of external driving is less well understood since the semiclassical qubit-field coupling renders the Jaynes-Cummings model for qubit-defect coupling undiagonalizable. We analyze the decoherence dynamics in the continuous coherent state space induced by the driving and solve the master equation endowed with an extra decay-cladded driving term via a Fokker-Planck equation. The solutions for diffusion propagators as Gaussian distributions show four distinct dynamic phases: four types of convergence paths to limit cycles of varying radius by the distribution mean, which are determined by the competing external driving and the defect decays. The qubit trajectory resulted from these solutions is a super-Poissonian over displac ed Fock states, which reduces to a Gibbs state of effective temperature decided by the defect at zero driving limit. Further, the Poincare map shows the dependence of the rate of convergence on the initial state. In other words, the qubit evolution can serve as an indicator of the defect coupling strength through the variation of the driving strength as a parameter.