Electronic transport in Weyl semimetals with a uniform concentration of torsional dislocations

TL;DR

This paper develops a theoretical model to analyze how a uniform distribution of torsional dislocations affects electronic transport in Weyl semimetals, providing analytical formulas for conductivity relevant to specific materials.

Contribution

It introduces a mathematical framework combining scattering theory and Kubo formalism to predict conductivity in Weyl semimetals with dislocations, including vertex corrections.

Findings

Analytical expressions for Green's functions with dislocation effects.

Predicted electrical conductivity for TaAs, TaP, NbAs, NbP.

Insights into disorder effects on Weyl semimetal transport.

Abstract

In this article, we consider a theoretical model for a type I Weyl semimetal, under the presence of a diluted uniform concentration of torsional dislocations. By a mathematical analysis for partial wave scattering (phase-shift) for the T-matrix, we obtain the corresponding retarded and advanced Green's functions that include the effects of multiple scattering events with the ensemble of randomly distributed dislocations. Combining this analysis with the Kubo formalism, and including vertex corrections, we calculate the electronic conductivity as a function of temperature and concentration of dislocations. We further evaluate our analytical formulas to predict the electrical conductivity of several transition metal monopnictides, i.e. TaAs, TaP, NbAs and NbP.