Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers
Keisuke Masuda, Hiroyoshi Itoh, Yoshiaki Sonobe, Hiroaki Sukegawa,, Seiji Mitani, Yoshio Miura

TL;DR
This study demonstrates that band folding in (111)-oriented Co/SrTiO3/Co and Ni/SrTiO3/Ni magnetic tunnel junctions leads to high TMR ratios, with Co-based junctions exceeding 500%, due to half-metallic band structures and coherent tunneling effects.
Contribution
It reveals how band folding effects induce half-metallic states that significantly enhance TMR ratios in (111)-oriented MTJs with SrTiO3 barriers, providing insights into material-specific differences.
Findings
Co-based MTJs achieve TMR over 500%.
Band folding creates half-metallic $oldsymbol{ m f extLambda_1}$ states.
Differences in TMR are due to $s$-orbital contributions at the Fermi level.
Abstract
We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented magnetic tunnel junctions (MTJs) with SrTiO barriers, Co/SrTiO/Co(111) and Ni/SrTiO/Ni(111). Our analysis combining the first-principles calculation and the Landauer formula shows that the Co-based MTJ has a high TMR ratio over 500%, while the Ni-based MTJ has a smaller value (290%). Since the in-plane lattice periodicity of SrTiO is about twice that of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) are folded in the - plane corresponding to the plane of the MTJ supercell. We find that this band folding gives a half-metallic band structure in the state of Co (Ni) and the coherent tunneling of such a half-metallic state yields a high TMR ratio. We also reveal that the difference in the TMR ratio between the Co- and Ni-based…
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Taxonomy
TopicsMagnetic and transport properties of perovskites and related materials · Electronic and Structural Properties of Oxides · Magnetic properties of thin films
