On the importance of measuring accurately LDOS maps using scanning tunneling spectroscopy in materials presenting atom-dependent charge order: the case of the correlated Pb/Si(111) single atomic layer
C. Tresca, T. Bilgeri, T. Bilgeri, G. Menard, V. Cherkez, R., Federicci, D. Longo, M. Herv\'e, F. Debontridder, P. David, D. Roditchev, G., Profeta, T. Cren, M. Calandra, C. Brun

TL;DR
This paper emphasizes the importance of proper measurement techniques in STM/STS to accurately determine charge order in 2D materials, demonstrating that incorrect methods can lead to false conclusions, with Pb/Si(111) as a case study.
Contribution
It introduces a correct measurement approach for LDOS maps in STM/STS, correcting previous misinterpretations of charge order in Pb/Si(111).
Findings
Lock-in technique can produce false charge order signals.
Full grid dI/dV(V) spectroscopy confirms the one-up two-down charge order.
Results agree with DFT calculations and highlight the role of electron interactions.
Abstract
We show how to properly extract the local charge order in two-dimensional materials from scanning tunneling microscopy/spectroscopy (STM/STS) measurements. When the charge order presents spatial variations at the atomic scale inside the unit cell and is energy dependent, particular care should be taken. In such cases the use of the lock-in technique, while acquiring an STM topography in closed feedback loop, leads to systematically incorrect dI/dV measurements giving a false local charge order. A correct method is either to perform a constant height measurement or to perform a full grid of dI/dV(V) spectroscopies, using a bias voltage setpoint outside the material bandwidth where the local density-of-states (LDOS) is spatially homogeneous. We take as a paradigmatic example of two-dimensional material the 1/3 single-layer Pb/Si(111). As large areas of this phase cannot be grown, charge…
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