Integration of 3-level MoS$_2$ multi-bridge channel FET with 2D layered contact and gate dielectric

TL;DR

This paper demonstrates a 3-level MoS$_2$ multi-bridge channel FET with high drive current, excellent electrostatic control, and a benchmark number of integrated channels, advancing 2D material-based transistor technology.

Contribution

It introduces a novel 3-level MoS$_2$ MBCFET with dual-gated channels, achieving high current and electrostatic performance, setting a new benchmark for layered material transistors.

Findings

Achieved a saturation current of 174.9 μA.

Demonstrated a sub-threshold slope of 63 mV/dec.

On-off ratio exceeded 10^8.

Abstract

Multi-bridge channel field effect transistor (MBCFET) provides several advantages over FinFET technology and is an attractive solution for sub-5 nm technology nodes. MBCFET is a natural choice for devices that use semiconducting layered materials (such as, MoS$_2$) as the channel due to their dangling-bond-free ultra-thin nature and the possibility of layer-by-layer transfer. MoS$_2$-based MBCFET is thus an attractive proposition for drive current boost without compromising on the electrostatics and footprint. Here we demonstrate a 3-level MoS$_2$ MBCFET, where each vertically stacked channel is dual-gated to achieve a saturation current of 174.9 $\mu$A (which translates to \txc{90 $\mu$A per $\mu$m footprint width (@2.7 $\mu$m channel length), a near-ideal sub-threshold slope of 63 mV/dec, and an on-off ratio $>$$10^8$. This work sets the benchmark for layer-material-based MBCFET in terms of the number of parallel channels integrated, simultaneously providing high drive current and excellent electrostatic control.