Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions

TL;DR

This paper reports the development of organic magnetic tunnel junctions using phenalenyl radicals, demonstrating room-temperature magnetoresistance and stable resistive switching, advancing organic spintronic device technology.

Contribution

It introduces a novel fabrication technique for organic magnetic tunnel junctions with phenalenyl radicals and reveals significant room-temperature magnetoresistance and resistive switching capabilities.

Findings

Achieved up to 14% magnetoresistance at room temperature.

Demonstrated stable voltage-driven resistive switching.

Developed a scalable platform for molecular quantum memristors.

Abstract

Delocalized carbon-based radical species with unpaired spin, such as phenalenyl (PLY) radical, opened avenues for developing multifunctional organic spintronic devices. Here we develop a novel technique based on a three-dimensional shadow mask and the in-situ deposition to fabricate PLY-, Cu-PLY-, and Zn-PLY-based organic magnetic tunnel junctions (OMTJs) with area 3x8 {\mu}m2 and improved morphology. The nonlinear and weakly temperature-dependent current-voltage (I-V) characteristics in combination with the low organic barrier height suggest tunneling as the dominant transport mechanism in the structurally and dimensionally optimized OMTJs. Cu-PLY-based OMTJs, show a significant magnetoresistance up to 14 percent at room temperature due to the formation of hybrid states at the metal-molecule interfaces called spinterface, which reveals the importance of spin-dependent interfacial modification in OMTJs design. In particular, Cu-PLY OMTJs shows a stable voltage-driven resistive switching response that suggests their use as a new viable and scalable platform for building molecular scale quantum memristors and processors.