Self-Consistent Computation of Spin Torques and Magneto-Resistance in Tunnel Junctions and Magnetic Read-Heads with Metallic Pinhole Defects

TL;DR

This paper develops a comprehensive 3D self-consistent spin transport model for tunnel junctions and magnetic read-heads, analyzing the effects of metallic pinhole defects on magneto-resistance and spin torques, with implications for device performance at sub-40 nm scales.

Contribution

The paper introduces a novel 3D self-consistent spin transport model that accounts for metallic pinhole defects and their impact on magneto-resistance and spin torques in tunnel junctions.

Findings

Metallic pinholes cause rapid magneto-resistance degradation.

Single pinhole defects significantly impair device performance.

Layer thickness influences spin torque polarization and stability.

Abstract

A three-dimensional self-consistent spin transport model is developed, which includes both tunnelling transport, as well as metallic transport. Using the spin accumulation computed either side of a tunnel barrier, spin torques are obtained, and it is shown the model reproduces both damping-like and field-like spin-transfer torques, with the expected sinusoidal angular dependence, and inverse ferromagnetic layer thickness dependence. An explicit solution to the drift-diffusion model is derived, which allows analysing the effect of both the reference and free layer thickness on the spin-transfer torque polarization and field-like coefficient. In particular, when the layers are thin, additional spin-dependent scattering contributions due to incomplete absorption of transverse spin components reduce both the damping-like and field-like spin torques. It is shown the model developed here can be used to compute the signal-to-noise ratio in realistic magnetic read-heads, where spin torque-induced fluctuations and instabilities limit the maximum operating voltage. The effect of metallic pinhole defects in the insulator layer is also analysed, which results in a mixture of metallic and tunnelling transport, and highly non-uniform charge and spin currents, requiring the full spin transport model to compute the resulting magneto-resistance and spin torques. Increasing the area covered by pinholes results in a rapid degradation of the magneto-resistance, following an inverse dependence. Moreover, the spin torque angular dependence becomes skewed, and the spin-transfer torque polarization decreases. The same results are obtained when considering tunnel junctions with a single pinhole defect, but decreasing cross-sectional area, showing that even a single pinhole defect can significantly degrade the performance of tunnel junctions and magnetic read-heads below the 40 nm node.