Ionization efficiency for nuclear recoils in silicon from $\sim 50$ eV to $3$ MeV

TL;DR

This paper introduces a comprehensive model for nuclear recoil ionization efficiency in silicon, extending Lindhard's theory to accurately describe data across a wide energy range from 50 eV to 3 MeV.

Contribution

The paper develops an extended model incorporating electronic stopping, straggling, charge screening, and Coulomb effects, improving the understanding of ionization efficiency in silicon.

Findings

Model fits data over four orders of magnitude in energy.

Enhanced description of electronic stopping and ionization processes.

Provides a unified framework for nuclear recoil ionization in silicon.

Abstract

We present a model for the nuclear recoil ionization efficiency in silicon based on an extension of Lindhard's theory where atomic bond disruption is modeled as a function of the initial ion energy, the interatomic potential, and the average ion-vacancy production energy. A better description of the electronic stopping than the one assumed by Lindhard, the effect of electronic straggling, as well as charge screening and Coulomb repulsion effects of ions are also considered. The model describes the available data over nearly four orders of magnitude in nuclear recoil energy.