Hidden spin-orbital texture at the $\bar{\Gamma}$-located valence band maximum of a transition metal dichalcogenide semiconductor
Oliver J. Clark, Oliver Dowinton, Mohammad Saeed Bahramy, Jaime, S\'anchez-Barriga

TL;DR
This study reveals a hidden, layer-specific spin texture in the valence bands of 1T-HfSe₂, driven by local electric dipoles and orbital contributions, with implications for spintronics and optoelectronic applications.
Contribution
It uncovers a ground-state, layer-confined spin texture in a transition metal dichalcogenide, controlled by light polarization, advancing understanding of spin-polarization mechanisms without magnetism.
Findings
Layer-specific spin polarization confined within Se-sublayers.
Spin-orbital textures obey time-reversal symmetry but show local TRS-breaking features.
Spin polarization can be tuned by linear light polarization.
Abstract
Finding stimuli capable of driving an imbalance of spin-polarised electrons within a solid is the central challenge in the development of spintronic devices. However, without the aid of magnetism, routes towards this goal are highly constrained with only a few suitable pairings of compounds and driving mechanisms found to date. Here, through spin- and angle-resolved photoemission along with density functional theory, we establish how the -derived bulk valence bands of semiconducting 1T-HfSe possess a local, ground-state spin texture spatially confined within each Se-sublayer due to strong sublayer-localised electric dipoles orientated along the -axis. This hidden spin-polarisation manifests in a `coupled spin-orbital texture' with in-equivalent contributions from the constituent -orbitals. While the overall spin-orbital texture for each Se sublayer is in strict adherence to…
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