Hydrodynamic magnetoresistance in graphene Corbino devices

TL;DR

This paper investigates hydrodynamic electron magnetotransport in graphene Corbino devices, revealing a unique magnetoresistance mechanism influenced by conductivity and viscosity, especially near charge neutrality, with analytic models and estimates provided.

Contribution

It introduces a new hydrodynamic magnetoresistance mechanism in graphene, with analytic expressions for Corbino devices and estimates for monolayer and bilayer systems.

Findings

Magnetoresistance can reach about 100% at weak magnetic fields.

The mechanism depends on intrinsic conductivity and viscosity, not present in Galilean-invariant systems.

Analytic formulas for magnetotransport coefficients are derived.

Abstract

We study hydrodynamic electron magnetotransport in graphene devices. We show that in these systems a distinct mechanism of magnetoresistance appears, which is absent in systems with Galilean-invariant electron liquid. The resulting magnetoresistance depends on the intrinsic conductivity and viscosity of the electron liquid, and becomes especially pronounced near charge neutrality. We obtain analytic expressions for magnetoransport coefficients of Corbino devices, and obtain estimates for the electrical and thermal magnetoresistances for monolayer and bilayer systems at charge neutrality. Magnetoresistance becomes strong (of order 100%) at relatively weak fields, at which the kinetic coefficients of the electron liquid are practically unaffected by the magnetic field.