Role of electron and hole doping in NdNi1_xVxO3 Nanostructure

TL;DR

This study investigates how electron and hole doping in NdNiO3 nanostructures affects their electronic properties, revealing significant resistivity modulation and transition suppression without structural changes, which could inform future electronic device development.

Contribution

It demonstrates reversible electronic property tuning in NdNiO3 nanostructures through V doping, without structural distortion, a novel approach for electronic applications.

Findings

Hole doping causes resistivity changes over five orders of magnitude.

Electron doping suppresses the metal-insulator transition.

Charge carrier switching is achieved without structural distortion.

Abstract

Neodymium nickelate, NdNiO3 attracts attraction due to the simultaneous occurrence of several phase transitions around the same temperature. The electronic properties of NdNiO3 are extremely complex as structural distortion, electron correlation, charge ordering, and orbital overlapping play significant roles in the transitions. We report the effects of electron and hole injection via doping a single 3d metal, V, in the NdNiO3 nanostructures to understand the variations in the electronic properties without any structural distortion. A reversible resistivity modulation more than five orders of magnitude via hole doping and complete suppression of metal to insulator transition via electron doping is observed along with the switching of major charge carriers. The modulation of electronic properties without any structural distortion and external strain opens up new directions to consider the NdNi1_xVxO3 nanostructures applicable as emerging electronic devices.