Linear-in-Frequency Optical Conductivity over a broad range in the three-dimensional Dirac semimetal candidate Ir$_2$In$_8$Se

TL;DR

This study measures the optical conductivity of Ir$_2$In$_8$Se, revealing linear frequency dependence indicative of 3D Dirac bands, and identifies Dirac points and Fermi surface nesting effects in this candidate Dirac semimetal.

Contribution

It provides experimental evidence of linear-in-frequency optical conductivity in Ir$_2$In$_8$Se, linking it to Dirac cones and band structure calculations, and explores Fermi surface nesting effects.

Findings

Linear optical conductivity from 500 to 4000 cm$^{-1}$ at 300 K.

Presence of type-II Dirac points near the Fermi level.

Observation of a weak energy gap below the charge density wave transition.

Abstract

The optical conductivity of the new Dirac semimetal candidate Ir$_2$In$_8$Se is measured in a frequency range from 40 to 30000 cm$^{-1}$ at temperatures from 300 K down to 10 K. The measurement reveals that the compound is a low carrier density metal. We find that the real part of the conductivity $\sigma_1(\omega)$ is linear in frequency over a broad range from 500 to 4000 cm$^{-1}$ at 300 K and varies slightly with cooling. This linearity strongly suggests the presence of three-dimensional linear electronic bands with band crossings near the Fermi level. Band structure calculations indicate the presence of type-II Dirac points. By comparing our data with the optical conductivity computed from the band structure, we conclude that the observed linear dependence mainly originates from the Dirac cones and the transition between the Dirac cones and the next lower bands. In addition, a weak energy gap feature is resolved below the charge density wave phase transition temperature in reflectivity spectra. An enhanced structure arising from the imperfect Fermi surface nesting is identified in the electronic susceptibility function, suggesting a Fermi surface nesting driven instability.