Growth and Photoelectrochemical Study of Germanium Sulphoselenide GeS$_{0.25}$Se$_{0.75}$ (I2) Crystals

TL;DR

This study reports the growth of GeS0.25Se0.75 crystals via CVT and evaluates their potential as photoelectrochemical solar cells by analyzing key solar parameters.

Contribution

It introduces a new method for growing GeSSe crystals and assesses their PEC properties for solar energy applications.

Findings

Successful growth of GeS0.25Se0.75 crystals using CVT

Characterization of PEC parameters like FF, Voc, Isc, and efficiency

Discussion of implications for solar energy devices

Abstract

In the present investigation, the author has employed a Chemical Vapour Transport (CVT) technique to grow the crystals of GeS$_{0.25}$Se$_{0.75}$ using iodine as a transporting agent. The grown crystals were then characterized for a Photoelectrochemical(PEC) study to find out solar parameters e.g. Fill Factor (FF), Open Circuit Voltage (Voc), Short Circuit Current (Isc), and Efficiency (n). The found results have been thoroughly described and implications have been discussed. Keywords: Crystal growth, PEC solar cell, fill factor, efficiency, Solar Energy