Effect of strain on tunneling time in graphene magnetic barrier

TL;DR

This paper investigates how strain affects tunneling time in graphene with magnetic barriers, revealing that strain and gate voltage can modulate group delay times from subluminal to superluminal, impacting nanoelectronic applications.

Contribution

It provides a theoretical analysis of strain effects on tunneling times in graphene, incorporating magnetic fields and energy gaps, which was not extensively studied before.

Findings

Strain influences the group delay time in graphene.

Gate voltage and strain can switch delay times between subluminal and superluminal.

Results have implications for high-speed graphene nanoelectronics.

Abstract

We solve the Dirac equation in three regions of graphene to get the solutions of the energy spectrum in connection to the strain, energy gap, and magnetic field. The Goos-H\"anchen shifts and group delay time will be obtained by applying the stationary phase approximation after the wave functions at the interfaces have been matched. Our results suggest that the group delay time is influenced by the presence of strain along the armchair and zigzag directions. We show that the gate voltage and strain have the ability to change the group delay from subluminality to superluminality. This may have significant uses in high-speed graphene-based nanoelectronics.