Room temperature spin-orbit torque efficiency and magnetization switching in SrRuO3-based heterostructures

TL;DR

This study demonstrates that SrRuO3 exhibits high spin-orbit torque efficiency and enables magnetization switching at room temperature, highlighting its potential for spintronic device applications.

Contribution

It provides a systematic benchmarking of SOT efficiency in SrRuO3 heterostructures, comparing favorably with heavy metals and showcasing practical switching capabilities.

Findings

SOT efficiency of about 0.2 at room temperature

Low threshold current density for switching (3.8x10^10 A/m^2)

Comparable SOT performance to heavy metals

Abstract

Spin-orbit torques (SOTs) from transition metal oxides (TMOs) in conjunction with magnetic materials have recently attracted tremendous attention for realizing high-efficient spintronic devices. SrRuO3 is a promising candidate among TMOs due to its large and tunable SOT-efficiency as well as high conductivity and chemical stability. However, a further study for benchmarking the SOT-efficiency and realizing SOT-driven magnetization switching in SrRuO3 is still highly desired so far. Here, we systematically study the SOT properties of high-quality SrRuO3 thin film heterostructuring with different magnetic alloys of both IMA and PMA configuration by the harmonic Hall voltage technique. Our results indicate that SrRuO3 possesses pronounced SOT-efficiency of about 0.2 at room temperature regardless of the magnetic alloys, which is comparable to typical heavy metals (HMs). Furthermore, we achieve SOT-driven magnetization switching with a low threshold current density of 3.8x10^10 A/m^2, demonstrating the promising potential of SrRuO3 for practical devices. By making a comprehensive comparison with HMs, our work unambiguously benchmarks the SOT properties and concludes the advantages of SrRuO3, which may bring more diverse choices for SOT applications by utilizing hybrid-oxide/metal and all-oxide systems.