Giant superlinear power dependence of photocurrent based on layered Ta$_2$NiS$_5$ photodetector
Xianghao Meng, Yuhan Du, Wenbin Wu, Nesta Benno Joseph, Xing Deng,, Jinjin Wang, Jianwen Ma, Zeping Shi, Binglin Liu, Yuanji Ma, Fangyu Yue, Ni, Zhong, Ping-Hua Xiang, Cheng Zhang, Chun-Gang Duan, Awadhesh Narayan,, Zhenrong Sun, Junhao Chu, Xiang Yuan

TL;DR
This paper reports a layered Ta$_2$NiS$_5$ photodetector exhibiting a giant superlinear photocurrent response with a power exponent of 1.5, driven by an intrinsic photoconductive mechanism, enhancing optoelectronic efficiency under high illumination.
Contribution
It demonstrates an intrinsic superlinear photoresponse in layered Ta$_2$NiS$_5$, a phenomenon rarely observed in 2D materials without heterostructures or arrays.
Findings
Photocurrent transitions from sublinear to superlinear with increasing power.
Giant superlinearity with a power exponent of 1.5 observed.
Photodetector shows high sensitivity and fast response.
Abstract
Photodetector based on two-dimensional (2D) materials is an ongoing quest in optoelectronics. These 2D photodetectors are generally efficient at low illuminating power but suffer severe recombination processes at high power, which results in the sublinear power dependence of photoresponse and lower optoelectronic efficiency. The desirable superlinear photocurrent is mostly achieved by sophisticated 2D heterostructures or device arrays, while 2D materials rarely show intrinsic superlinear photoresponse. Here, we report the giant superlinear power dependence of photocurrent based on multi-layer TaNiS. While the fabricated photodetector exhibits good sensitivity ( per square) and fast photoresponse (), the bias-, polarization-, and spatial-resolved measurements point to an intrinsic photoconductive mechanism. By increasing the incident power density from $1.5…
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Taxonomy
TopicsChalcogenide Semiconductor Thin Films · 2D Materials and Applications · GaN-based semiconductor devices and materials
