Polarization-controlled volatile ferroelectric and capacitive switching in Sn$_2$P$_2$S$_6$

TL;DR

This paper demonstrates room-temperature volatile ferroelectric switching in Sn₂P₂S₆, showing polarization history dependence and memcapacitive behavior, with potential applications in neuromorphic electronics and smart circuits.

Contribution

It reveals polarization-controlled volatile ferroelectric and capacitive switching in Sn₂P₂S₆, a novel mechanism influenced by domain walls and initial polarization states.

Findings

Polarization switching hysteresis is imprinted by initial polarization.

Switching behavior can be tuned by sample thickness and electric fields.

The material exhibits memcapacitive-like properties with potential for neuromorphic applications.

Abstract

Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic-like functional properties; in short, the electronic response must depend on the voltage history, thus enabling learning algorithms. Here we demonstrate volatile ferroelectric switching of Sn$_2$P$_2$S$_6$ at room temperature and see that initial polarization orientation strongly determines the properties of polarization switching. In particular, polarization switching hysteresis is strongly imprinted by the original polarization state, shifting the regions of non-linearity toward zero-bias. As a corollary, polarization switching also enables effective capacitive switching, approaching the sought-after regime of memcapacitance. Landau-Ginzburg-Devonshire simulations demonstrate that one mechanism by which polarization can control the shape of the hysteresis loop is the existence of charged domain walls decorating the periphery of the repolarization nucleus. These walls oppose the growth of the switched domain and favor back-switching, thus creating a scenario of controlled volatile ferroelectric switching. Although the measurements were carried out with single crystals, prospectively volatile polarization switching can be tuned by tailoring sample thickness, domain wall mobility and electric fields, paving way to non-linear dielectric properties for smart electronic circuits.