Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS

TL;DR

This study uses Laplace DLTS to differentiate between two specific defects, EH1 and S1, in irradiated 4H-SiC, revealing their distinct emission line signatures and aiding defect identification.

Contribution

The paper demonstrates the effectiveness of Laplace DLTS in distinguishing EH1 and S1 defects in 4H-SiC, providing detailed emission line analysis for each defect.

Findings

EH1 shows a single emission line from Ci(h)

S1 exhibits two emission lines from VSi(h) and VSi(k)

Laplace DLTS can effectively differentiate these defects

Abstract

We report on the low-energy electron and fast neutron irradiated 4H-SiC studied by deep-level transient spectroscopy (DLTS) and Laplace DLTS. Irradiations introduced two defects, Ec-0.4eV and Ec-0.7eV. They were previously assigned to carbon interstitial (Ci) labeled as EH1/3 and silicon-vacancy (VSi) labeled as S1/2, for the low-energy electron and fast neutron irradiation, respectively. This work demonstrates how Laplace DLTS can be used as a useful tool for distinguishing the EH1 and S1 defects. We show that EH1 consists of a single emission line arising from the Ci(h), while S1 has two emission lines arising from the VSi(h) and VSi(k) lattice sites.