Optimal control of a cavity-mediated iSWAP gate between silicon spin qubits

TL;DR

This paper models the effects of various error sources on the fidelity of a cavity-mediated iSWAP gate between silicon spin qubits, identifying optimal operating regimes and device improvements to enhance performance.

Contribution

It provides a comprehensive analysis of error mechanisms, including valley physics, and proposes optimal regimes for high-fidelity cavity-mediated spin qubit gates.

Findings

Valley excitation can limit gate fidelity when valley splittings are small.

Tradeoffs exist between gating times and exposure to noise sources.

Optimal regimes balance charge-like and spin-like qubits to minimize errors.

Abstract

Semiconductor spin qubits may be coupled through a superconducting cavity to generate an entangling two-qubit gate. However, the fidelity of such an operation will be reduced by a variety of error mechanisms such as charge and magnetic noise, phonons, cavity loss, transitions to non-qubit states and, for electrons in silicon, excitation into other valley eigenstates. Here, we model the effects of these error sources and the valley degree of freedom on the performance of a cavity-mediated two-qubit iSWAP gate. For valley splittings inadequately large relative to the interdot tunnel coupling within each qubit, we find that valley excitation may be a limiter to the fidelity of this two-qubit gate. In addition, we show tradeoffs between gating times and exposure to various error sources, identifying optimal operating regimes and device improvements that would have the greatest impact on the fidelity of the cavity-mediated spin iSWAP. Importantly, we find that while the impact of charge noise and phonon relaxation favor operation in the regime where the qubits are most spin-like to reduce sensitivity to these sources of noise, the combination of hyperfine noise and valley physics shifts the optimal regime to charge-like qubits with stronger effective spin-photon coupling so that gate times can be made as short as possible. In this regime, the primary limitation is the need to avoid Landau-Zener transitions as the gate is implemented.