Boron nitride-graphene in-plane hexagonal heterostructure in oxygen environment

TL;DR

This study investigates the growth and behavior of boron nitride-graphene heterostructures in oxygen environments, revealing methods to control composition and stacking for electronic applications.

Contribution

It introduces a new growth protocol for in-plane h-BNG layers with controllable composition and stacking, avoiding transfer procedures.

Findings

Oxygen intercalation and selective etching of graphene observed at elevated temperatures.

Controlled in-plane h-BNG layers achieved through repeated growth cycles.

Vertical stacking of h-BN/graphene heterostructures without transfer procedures.

Abstract

Aiming to improve fabrication protocols for boron nitride and graphene (h-BNG) lateral heterostructures, we studied the growth of h-BNG thin films on platinum and their behavior in an oxygen environment. We employed a surface science approach based on advanced spectroscopy and imaging techniques to investigate the evolution of surface stoichiometry and chemical intermediates at each reaction step. During oxygen exposure at increasing temperatures, we observed progressive and subsequent intercalation of oxygen, and selective etching of graphene accompanied by the oxidation of boron. Additionally, by exploiting the O2 etching selectivity towards graphene at 250{\deg}C and repeating growth cycles, we obtained in-plane h-BNG layers with controllable compositions and vertically stacked h-BN/Gr heterostructures without the use of consecutive transfer procedures. The growth using a single precursor molecule can be beneficial for the development of versatile atomically thin layers for electronic devices.