High-performance Pockels-effect modulation and switching in silicon-based GaP/Si, AlP/Si, ZnS/Si, AlN/3C-SiC, GaAs/Ge, ZnSe/GaAs, and ZnSe/Ge superlattice-on-insulator integrated circuits

TL;DR

This paper introduces Si-based superlattice-on-insulator platforms for high-performance electro-optical switching and modulation, utilizing a theoretical model to analyze Pockels effect in various lattice-matched superlattices for integrated photonic circuits.

Contribution

It presents a novel theoretical investigation of Pockels EO effect in multiple lattice-matched superlattices for integrated photonics applications.

Findings

Theoretical analysis of Pockels effect in superlattices

Design of waveguided EO switches and modulators

Potential for high-performance integrated photonic circuits

Abstract

We propose new Si-based waveguided Superlattice on Insulator (SLOI) platforms for high-performance electro-optical (EO) 2 x 2 and N x M switching and 1 x 1 modulation; including broad spectrum and resonant. We present a theoretical investigation, based on the tight-binding Hamiltonian, of the Pockels EO effect in the lattice-matched undoped GaP/Si, AlP/Si, ZnS/Si, AlN/3C-SiC, GaAs/Ge, ZnSe/GaAs, and ZnSe/Ge wafer-scale short-period superlattices that are etched into waveguided networks of small-footprint Mach-Zehnder interferometers and micro-ring resonators to yield opto-electronic chips.