Spin-Hall magnetoresistance in quasi-two-dimensional antiferromagnetic insulator/metal bilayer systems

TL;DR

This paper investigates how spin Hall magnetoresistance varies with temperature in antiferromagnetic insulator/metal bilayers, using quantum Monte Carlo simulations to understand underlying physical mechanisms.

Contribution

It introduces a quantum Monte Carlo simulation approach to analyze the temperature-dependent SMR in AFI/metal bilayers, considering spin amplitude, layer thickness, and exchange randomness.

Findings

SMR amplitude depends on temperature, spin, and layer thickness.

Simulation results provide insights into atomic-layer magnetic compounds.

The study offers a theoretical framework for experimental SMR analysis.

Abstract

We study the temperature dependence of spin Hall magnetoresistance (SMR) in antiferromagnetic insulator (AFI)/metal bilayer systems. We calculate the amplitude of the SMR signal by using a quantum Monte Carlo simulation and examine how the SMR depends on the amplitude of the spin, thickness of the AFI layer, and randomness of the exchange interactions. Our results for simple quantum spin models provide a useful starting point for understanding SMR measurements on atomic layers of magnetic compounds.