Unlocking the electronic, optical and transport properties of semiconductor coupled quantum dots using first principles methods
Arup Chakraborty, Bidisa Das, and Indra Dasgupta

TL;DR
This study uses first-principles methods to analyze the electronic, optical, and transport properties of II-VI semiconductor coupled quantum dots, revealing how nanoscale effects influence their suitability for optoelectronic applications.
Contribution
It provides a comprehensive first-principles analysis of stability, bandgap, band offsets, optical absorption, and transport properties of coupled quantum dots, highlighting nanoscale effects and validation of band offset trends.
Findings
Band gaps and offsets are significantly affected by quantum confinement and strain.
Band offset trends agree with electrostatic potential calculations.
Absorption peaks are in the UV region, edges in visible; transport shows asymmetry.
Abstract
Semiconductor coupled quantum dots provide a unique opportunity of tuning bandgaps by tailoring band offsets, making them ideal for photovoltaic and other applications. Here, we have studied stability, trends in the band gap, band offsets, and optical properties for a series of coupled quantum dots comprised of II-VI semiconductor using a hybrid functional method. We have shown how the quantum confinement and interfacial strain considerably affect the band gap and band offsets for these heterostructures at the nanoscale. We show that the trend in band offsets obtained from our first-principles electronic structure calculations agrees with that obtained from the method of average electrostatic potential. It is found that a common anion rule for band offset is followed for these heterostructures at the nanoscale. Further, the calculated optical absorption spectra for these coupled quantum…
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Quantum Dots Synthesis And Properties · ZnO doping and properties
