Defect engineering and Fermi-level tuning in half-Heusler topological semimetals

TL;DR

This paper investigates how intrinsic defects can be used to tune the Fermi level in half-Heusler topological semimetals, aiming to enhance their quantum properties for device applications.

Contribution

It demonstrates through density functional theory that intrinsic defects, especially Pt vacancies, significantly affect the Fermi level in half-Heusler semimetals, providing strategies for Fermi level tuning.

Findings

Pt vacancies are the most common intrinsic defects.

Defects cause the Fermi level to shift below the ideal position.

Fermi level tuning can be achieved by adjusting chemical potentials.

Abstract

Three-dimensional topological semimetals host a range of interesting quantum phenomena related to band crossing that give rise to Dirac or Weyl fermions, and can be potentially engineered into novel quantum devices. Harvesting the full potential of these materials will depend on our ability to position the Fermi level near the symmetry-protected band crossings so that their exotic spin and charge transport properties become prominent in the devices. Recent experiments on bulk and thin films of topological half-Heuslers show that the Fermi level is far from the symmetry-protected crossings, leading to strong interference from bulk bands in the observation of topologically protected surface states. Using density functional theory calculations we explore how intrinsic defects can be used to tune the Fermi level in the two representative half-Heusler topological semimetals PtLuSb and PtLuBi. Our results explain recent results of Hall and angle-resolved photoemission measurements. The calculations show that Pt vacancies are the most abundant intrinsic defects in these materials grown under typical growth conditions, and that these defects lead to excess hole densities that place the Fermi level significantly below the expected position in the pristine material. Directions for tuning the Fermi level by tuning chemical potentials are addressed.