A Temperature Independent Readout Circuit for ISFET-Based Sensor Applications
Elmira Moussavi, Dominik Sisejkovic, Animesh Singh, Daniyar Kizatov,, Rainer Leupers, Sven Ingebrandt, Vivek Pachauri, Farhad Merchant

TL;DR
This paper introduces a novel temperature-independent readout circuit for ISFET sensors that maintains performance across a wide temperature range without needing extra sensors, using threshold voltage differences.
Contribution
The paper proposes a new readout circuit design that eliminates temperature effects in ISFET measurements, improving simplicity and reliability.
Findings
Achieves a temperature coefficient of 11.9 ppm/°C from 0-100°C
Effectively monitors pH changes via simulation
Does not require additional sensors for temperature compensation
Abstract
The ion-sensitive field-effect transistor (ISFET) is an emerging technology that has received much attention in numerous research areas, including biochemistry, medicine, and security applications. However, compared to other types of sensors, the complexity of ISFETs make it more challenging to achieve a sensitive, fast and repeatable response. Therefore, various readout circuits have been developed to improve the performance of ISFETs, especially to eliminate the temperature effect. This paper presents a new approach for a temperature-independent readout circuit that uses the threshold voltage differences of an ISFET-MOSFET pair. The Linear Technology Simulation Program with Integrated Circuit Emphasis (LTspice) is used to analyze the ISFET performance based on the proposed readout circuit characteristics. A macro-model is used to model ISFET behavior, including the first-level Spice…
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Taxonomy
TopicsAnalytical Chemistry and Sensors · Sensor Technology and Measurement Systems · Water Quality Monitoring and Analysis
